| PART |
Description |
Maker |
| BCR16CS |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
| CR02 CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| PS21342-N |
DIP - IPM
MITSUBISHI SEMICONDUCTOR Power Module TRANSFER-MOLD TYPE INSULATED TYPE
MITSUBISHI SEMICONDUCTOR TRANSFER-MOLD TYPE INSULATED TYPE
Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MS20 |
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor
|
AVX Corporation
|
| AN80T05 |
Panasonic Semiconductor Singapore A Division of Panasonic Semiconductor Asia Pte Ltd
|
Panasonic Semiconductor
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KIA1117BS/BF/BPI00 KIA1117BS/BF/BPI12 |
SEMICONDUCTOR
|
KEC(Korea Electronics)
|
